Asymmetric quantum well broadband thyristor laser

Design of a new asymmetric waveguide in InP-Based multi-quantum well laser

Today, electron leakage in InP-based separate confinement laser diode has a serious effect on device performance. Control of electron leakage current is the aim of many studies in semiconductor laser industry. In this study, for the first time, a new asymmetric waveguide structure with n-interlayer for a 1.325 μm InP-based laser diode with InGaAsP multi-quantum well is proposed and theoreticall...

Broadband Emission in Quantum-Dash Semiconductor Laser

A new type of semiconductor laser is studied, in which injected carriers in the active region are quantum mechanically confined in localized finite self-assembled wire-like quantumdash (Qdash) structures that are varied in sizes and compositions. Effects of such carrier distribution and quasi three-dimensional density of states contribute to a quasisupercontinuum interband lasing characteristic...

Improvement of temperature-stability in a quantum well laser with asymmetric barrier layers

Analysis of Kirk Effect in Nanoscale Quantum Well Heterojunction Bipolar Transistor Laser

In this paper, we present an analytical model to analysis the kirk effect onstatic and dynamic responses of quantum well heterojunction bipolar transistor lasers(HBTLs). Our analysis is based on solving the kirk current equation, continuityequation and rate equations of HBTL. We compare the performance (current gain,output photon number and small signal modulation bandwi...

Laser-induced quantum coherence in a semiconductor quantum well.

The phenomenon of electromagnetically induced quantum coherence is demonstrated between three confined electron subband levels in a quantum well which are almost equally spaced in energy. Applying a strong coupling field, two-photon resonant with the 1-3 intersubband transition, produces a pronounced narrow transparency feature in the 1-2 absorption line. This result can be understood in terms ...